View TC55VEM416BXGN55_7266032.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 1/18 toshiba mos digital integrat ed circuit silicon gate cmos 1,048,576-word by 16-bit fu ll cmos static ram description the tc55vcm416b, tc55vem416b, tc55ycm416b and tc55yem416b is a 16,777,216-bit static random access memory (sram) organized as 1,048,576 words by 16 bits. fabricated using toshiba's cmos silicon gate process technology, this device operat es from a single 2.3 to 3.6 v/1.65 to 2.2 v power supply. advanced circuit technology provides both high speed and low power at an operating current of 2 ma/mhz and a minimum cycle time of 55 ns. it is automatically placed in low-power mode at 0.7 a standby current (at v dd = 3 v, ta = 25c, typical) when chip enable ( ce1 ) is asserted high or (ce2) is assert ed low. there are three control inputs. ce1 and ce2 are used to select the device and fo r data retention control, and output enable ( oe ) provides fast memory access. data byte control pin ( lb , ub ) provides lower and upper byte access. this device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. and, with a guaranteed operating extr eme temperature range of ? 40 to 85c, the tc55vcm416b, tc55vem416b, tc55ycm416b and tc55yem416b can be used in environments exhibiting extreme temperature conditions. the tc55vcm416btgn/bsgn, tc55ycm416btgn/bsgn is available in a plastic 48-pin thin-small-outline package (tsop). the tc55vem416bxgn, tc55yem416bxgn is available in a plastic 48-ball bga. features ? low-power dissipation operating: 6 mw/mhz (typical) ? power down features using ce1 and ce2 ? wide operating temperature range of ? 40 to 85c ? lead-free access time (max) supply current part number operating supply voltage package supply voltage 2.7~3.6 v supply voltage 2.3~3.6 v at operating (max) at standby (max) at data retention tc55vcm416btgn55 48-pin plastic tsop(i) (12 20mm) (0.5mm pin pitch) (normal bent) 55 ns 70 ns tc55vcm416bsgn55 48-pin plastic tsop(i) (12 14mm) (0.5mm pin pitch) (normal bent) 55 ns 70 ns TC55VEM416BXGN55 2.3~3.6 v 48-ball bga (8 11mm) (0.75mm ball pitch) 55 ns 70 ns 20 ma 15 a 1.5~3.6 v access time (max) supply current part number operating supply voltage package supply voltage 1.8~2.2 v supply voltage 1.65~2.2 v at operating (max) at standby (max) at data retention tc55ycm416btgn70 48-pin plastic tsop(i) (12 20mm) (0.5mm pin pitch) (normal bent) 70 ns 85 ns tc55ycm416bsgn70 48-pin plastic tsop(i) (12 14mm) (0.5mm pin pitch) (normal bent) 70 ns 85 ns tc55yem416bxgn70 1.65~2.2 v 48-ball bga (8 11mm) (0.75mm ball pitch) 70 ns 85 ns 15 ma 15 a 1.0~2.2 v lead-free
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 2/18 pin assignment (top view) 48-pin plastic tsop(i) (12 20mm) (0.5mm pin pitch) (normal bent) tc55vcm416btgn tc55ycm416btgn 48-pin plastic tsop(i) (12 14mm) (0.5mm pin pitch) (normal bent) tc55vcm416bsgn tc55ycm416bsgn 48-ball bga (8 11mm) (0.75mm ball pitch) tc55vem416bxgn tc55yem416bxgn pin names a0~a19 address inputs 1 ce , ce2 chip enable r/w read/write control oe output enable lb , ub data byte control i/o1~i/o16 data inputs/outputs v dd power gnd ground nc no connection op* option * : op pin must be open or connected to gnd. a b c d e f g h 1 oe ub i/o11 i/o12 i/o13 i/o14 a19 a8 a0 a3 a5 a17 op a14 a12 a9 a1 a4 a6 a7 a16 a15 a13 a10 a2 1 ce i/o2 i/o4 i/o5 i/o6 r/w a11 ce2 i/o1 i/o3 v dd gnd i/o7 i/o8 nc lb i/o9 i/o10 gnd v dd i/o15 i/o16 a18 2 3 4 5 6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 a 16 nc gnd i/o16 i/o8 i/o15 i/o7 i/o14 i/o6 i/o13 i/o5 v dd i/o12 i/o4 i/o11 i/o3 i/o10 i/o2 i/o9 i/o1 gnd a 0 a15 a14 a13 a12 a11 a10 a9 a8 a19 nc r/w ce2 op a4 a2 a18 a17 a7 a6 a5 a3 a1 ce1 oe ub lb
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 3/18 block diagram v dd gnd ce i/o8 r/w ce i/o16 oe ub lb 1 ce a19 a11 a12 a13 a14 ce2 a15 a16 a0 ce a1 a2 a3 a4 a8 a9 a10 a5 a6 a7 a17 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 i/o15 i/o14 i/o13 i/o12 i/o11 i/o10 i/o9 row address decoder row address buffer row address register data input buffer data input buffer clock generator data output buffer data output buffer column address register column address decoder column address buffer sense amp memory cell array 4,096 128 16 2bank (16,777,216) a18
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 4/18 operating mode mode 1 ce ce2 oe r/w lb ub i/o1~i/o8 i/o9~i/o16 power l h l h l l output output i ddo l h l h h l high-z output i ddo read l h l h l h output high-z i ddo l h * l l l input input i ddo l h * l h l high-z input i ddo write l h * l l h input high-z i ddo l h h h l l high-z high-z i ddo l h h h h l high-z high-z i ddo output deselect l h h h l h high-z high-z i ddo h * * * * * high-z high-z i dds standby * l * * * * high-z high-z i dds * = don't care h = logic high l = logic low maximum ratings value symbol rating tc55vcm416btgn55 tc55vcm416bsgn55 TC55VEM416BXGN55 tc55ycm416btgn70 tc55ycm416bsgn70 tc55yem416bxgn70 unit v dd power supply voltage ? 0.3~4.2 ? 0.3~2.5 v v in input voltage ? 0.3 * 1 ~4.2 ? 0.3 * 1 ~2.5 v v i/o input/output voltage ? 0.5~v dd + 0.5 ? 0.5~v dd + 0.5 v p d power dissipation 0.6 0.6 w t solder soldering temperature (10s) 260 260 c tsop type ? 55~150 ? 55~150 c t stg storage temperature bga type ? 55~125 ? 55~125 c t a operating ambient temperature ? 40~85 ? 40~85 c *1 : ? 1.0 v when measured at a pulse width of 10ns dc recommended operating conditions ( ta = ? 40 to 85c ) tc55vcm416btgn55 tc55vcm416bsgn55 TC55VEM416BXGN55 tc55ycm416btgn70 tc55ycm416bsgn70 tc55yem416bxgn70 symbol parameter test condition min max min max unit v dd power supply voltage ? 2.3 3.6 1.65 2.2 2.3 v v dd < 2.7 v 2.0 v dd + 0.3 ? ? 2.7 v v dd 3.6 v 2.2 v dd + 0.3 ? ? 1.65 v v dd < 1.8 v ? ? 1.4 v dd + 0.3 v ih input high voltage 1.8 v v dd 2.2 v ? ? 1.6 v dd + 0.3 v il input low voltage ? ? 0.3 * 2 v dd 0.24 ? 0.3 * 2 v dd 0.22 v dh data retention supply voltage ? 1.5 3.6 1.0 2.2 v *2 : ? 1.0 v when measured at a pulse width of 10ns
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 5/18 dc characteristics (ta = ? 40 to 85c, v dd = 2.3 to 3.6 v/1.65 to 2.2 v) tc55vcm416btgn55 tc55vcm416bsgn55 TC55VEM416BXGN55 tc55ycm416btgn70 tc55ycm416bsgn70 tc55yem416bxgn70 symbol parameter test condition min typ max min typ max unit i il input leakage current v in = 0 v~v dd ? ? 1.0 ? ? 1.0 a i oh output high current v oh = v dd ? 0.5 v ? 0.5 ? ? ? 0.5 ? ? ma i ol output low current v ol = 0.4 v 2.1 ? ? 2.1 ? ? ma i lo output leakage current 1 ce = v ih or ce2 = v il or lb = ub = v ih or r/w = v il or oe = v ih , v out = 0 v~v dd ? ? 1.0 ? ? 1.0 a min ? ? 20 ? ? 12 i ddo1 1 ce = v il and ce2 = v ih and r/w = v ih i out = 0 ma, other input = v ih /v il t cycle 1 s ? ? 8 ? ? 2 ma min ? ? 20 ? ? 12 i ddo2 operating current 1 ce = 0.2 v and ce2 = v dd ? 0.2 v and r/w = v dd ? 0.2 v, i out = 0 ma, other input = v dd ? 0.2 v/0.2 v t cycle 1 s ? ? 2 ? ? 2 ma i dds1 1 ce = v ih or ce2 = v il ? ? 1 ? ? 1 ma v dd = 2.3~3.6 v ta = ? 40~85c ? ? 15 ? ? ? ta = 25c ? 0.7 1.0 ? ? ? v dd = 3.0 v ta = ? 40~40c ? ? 2 ? ? ? v dd = 1.65~2.2 v ta = ? 40~85c ? ? ? ? ? 15 i dds2 standby current 1) 1 ce = v dd ? 0.2 v, ce2 = v dd ? 0.2 v 2) ce2 = 0.2 v v dd = 1.8 v ta = 25c ? ? ? ? 0.7 1.0 a note: in standby mode with 1 ce v dd ? 0.2 v, these limits are assured for the condition ce2 v dd ? 0.2 v or ce2 0.2 v. the other input pins are not restricted of input level. capacitance (ta = 25c, f = 1 mhz) symbol parameter test condition max unit c in input capacitance v in = gnd 10 pf c out output capacitance v out = gnd 10 pf note: this parameter is periodically sampled and is not 100% tested.
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 6/18 ac characteristics and operating conditions (ta = ? 40 to 85c) read cycle tc55vcm416btgn/bsgn55 TC55VEM416BXGN55 v dd = 2.7~3.6 v v dd = 2.3~3.6 v symbol parameter min max min max unit t rc read cycle time 55 ? 70 ? t acc address access time ? 55 ? 70 t co1 chip enable( 1 ce ) access time ? 55 ? 70 t co2 chip enable(ce2) access time ? 55 ? 70 t oe output enable access time ? 30 ? 35 t ba data byte control access time ? 30 ? 35 t coe chip enable low to output active 5 ? 5 ? t oee output enable low to output active 0 ? 0 ? t be data byte control low to output active 0 ? 0 ? t od chip enable high to output high-z ? 25 ? 30 t odo output enable high to output high-z ? 25 ? 30 t bd data byte control high to output high-z ? 25 ? 30 t oh output data hold time 10 ? 10 ? ns write cycle tc55vcm416btgn/bsgn55 TC55VEM416BXGN55 v dd = 2.7~3.6 v v dd = 2.3~3.6 v symbol parameter min max min max unit t wc write cycle time 55 ? 70 ? t wp write pulse width 40 ? 50 ? t cw chip enable to end of write 45 ? 55 ? t bw data byte control to end of write 45 ? 55 ? t as address setup time 0 ? 0 ? t wr write recovery time 0 ? 0 ? t odw r/w low to output high-z ? 25 ? 30 t oew r/w high to output active 0 ? 0 ? t ds data setup time 25 ? 30 ? t dh data hold time 0 ? 0 ? ns note: t od , t odo , t bd and t odw are specified in time when an output becom es high impedance, and are not judged depending on an output voltage level.
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 7/18 ac characteristics and operating conditions (ta = ? 40 to 85c) read cycle tc55ycm416btgn/bsgn70 tc55yem416bxgn70 v dd = 1.8~2.2 v v dd = 1.65~2.2 v symbol parameter min max min max unit t rc read cycle time 70 ? 85 ? t acc address access time ? 70 ? 85 t co1 chip enable( 1 ce ) access time ? 70 ? 85 t co2 chip enable(ce2) access time ? 70 ? 85 t oe output enable access time ? 35 ? 45 t ba data byte control access time ? 35 ? 45 t coe chip enable low to output active 5 ? 5 ? t oee output enable low to output active 0 ? 0 ? t be data byte control low to output active 0 ? 0 ? t od chip enable high to output high-z ? 30 ? 35 t odo output enable high to output high-z ? 30 ? 35 t bd data byte control high to output high-z ? 30 ? 35 t oh output data hold time 10 ? 10 ? ns write cycle tc55ycm416btgn/bsgn70 tc55yem416bxgn70 v dd = 1.8~2.2 v v dd = 1.65~2.2 v symbol parameter min max min max unit t wc write cycle time 70 ? 85 ? t wp write pulse width 50 ? 60 ? t cw chip enable to end of write 55 ? 65 ? t bw data byte control to end of write 55 ? 65 ? t as address setup time 0 ? 0 ? t wr write recovery time 0 ? 0 ? t odw r/w low to output high-z ? 30 ? 35 t oew r/w high to output active 0 ? 0 ? t ds data setup time 30 ? 35 ? t dh data hold time 0 ? 0 ? ns note: t od , t odo , t bd and t odw are specified in time when an output becom es high impedance, and are not judged depending on an output voltage level.
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 8/18 ac test conditions (ta = ? 40 to 85c, v dd = 2.3 to 3.6 v/1.65 to 2.2 v) test condition parameter tc55vcm416btgn55 tc55vcm416bsgn55 TC55VEM416BXGN55 tc55ycm416btgn70 tc55ycm416bsgn70 tc55yem416bxgn70 high v dd 0.7 + 0.2 v v dd ? 0.2 v input pulse level low 0.2 v 0.2 v t r 1 v/ns 1 v/ns input rise and fall time (fig.1) t f 1 v/ns 1 v/ns timing measurements v dd 0.5 v dd 0.5 reference level v dd 0.5 v dd 0.5 v tm 2.3 v 1.65 v r1 810 470 r2 1610 740 output load (fig.2) c l 30 pf 30 pf fig.1 : input rise and fall time fig.2 : output load gnd 90% t r 10% 90% 10% t f v dd dout c l r2 v tm r1
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 9/18 timing diagrams read cycle write cycle 1 (r/w controlled) address a0~a19 ce2 d out i/o1~16 t rc t acc t od valid data out t oe t be t bd hi-z hi-z t co1 1 ce oe t ba t coe t oh t odo t oee t co2 ub , lb address a0~a19 r/w ce2 d out i/o1~16 t as t cw t wr valid data in t odw d in i/o1~16 t wp t ds t dh t oew hi-z t cw 1 ce t wc t bw ub , lb (see note 2) (see note 1)
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 10/18 write cycle 2 ( controlled) write cycle 3 (ce2 controlled) address a0~a19 r/w t wc t as t wr t wp 1 ce d out i/o1~16 t cw valid data in d in i/o1~16 t ds t dh t be hi-z hi-z ce2 t cw t odw t bw t coe ub , lb address a0~a19 r/w t wc t as t wr t wp 1 ce d out i/o1~16 t cw valid data in d in i/o1~16 t ds t dh hi-z hi-z t cw ce2 t bw t be t coe t odw ub , lb ce1
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 11/18 write cycle 4 ( , controlled) note: ? read cycle r/w remains high for the read cycle. ? write cycle1 (1) if ce1 (or ub or lb ) goes low(or ce2 goes high) coincide nt with or after r/w goes low, the outputs will remain at high impedance. (2) if ce1 (or ub or lb ) goes high(or ce2 goes low) coincident with or before r/w goes high, the outputs will remain at high impedance. don?t input the same polarity signal as a r/w signal into a oe during the write cycle. ? write cycle1 to 4 if oe is high during the write cycle, the outputs will remain at high impedance. because i/o signals may be in the output state at this time, input signals of reverse polarity must not be applied. ub lb address a0~a19 r/w t wc t as t wr t wp 1 ce d out i/o1~16 valid data in d in i/o1~16 t ds t dh hi-z hi-z t cw ce2 t bw t be t coe t odw ub , lb t cw
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 12/18 data retention characteristics ( ta = ? 40 to 85c ) tc55vcm416btgn55 tc55vcm416bsgn55 TC55VEM416BXGN55 tc55ycm416btgn70 tc55ycm416bsgn70 tc55yem416bxgn70 symbol parameter min max min max unit v dh data retention supply voltage 1.5 3.6 1.0 2.2 v v dh = 3.6 v ta = ? 40~85c ? 15 ? ? v dh = 3.0 v ta = ? 40~40c ? 2 ? ? i dds2 standby current v dh = 2.2 v ta = ? 40~85c ? ? ? 15 a t cdr chip deselect to data retention mode time 0 ? 0 ? ns t r recovery time 5 ? 5 ? ms controlled data retention mode (see note 1) ce2 controlled data retention mode (see note 4) note: (1) in ce1 controlled data retention mode, minimum standby current mode is entered when ce2 0.2 v or ce2 v dd ? 0.2 v. (2) when ce1 is operating at the v ih (min.) level, the operating current is given by i dds1 during the transition of v dd from 2.3(2.7) to 2.2 v(2.4 v).(tc55vcm416b, tc55vem416b) (3) when ce1 is operating at the v ih (min.) level, the operating current is given by i dds1 during the transition of v dd from 1.65 to 1.6 v.(tc55ycm416b, tc55yem416b) (4) in ce2 controlled data retention mode, minimum standby current mode is entered when ce2 0.2 v. ce1 v dd 2.3 v (1.65 v) gnd v ih data retention mode t r (see note 2) (see note 2) t cdr v dd v dd ? 0.2 v 1 ce (see note 3) v dd gnd v il data retention mode t r t cdr v dd 0.2 v v ih ce2 2.3 v (1.65 v) (see note 3)
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 13/18 marking (example) tc55vcm416btgn/tc55ycm416btgn family tc55vcm416bsgn/tc55ycm416bsgn family tc55vem416bxgn/tc55yem416bxgn family explanation japan tc55 em416 bxgn ** : operating supply voltage (v:v dd = 2.3 to 3.6 v, y: v dd = 1.65 to 2.2 v) ** : speed version : key code : lot code control code week code ye a r c o d e japan tc55 cm416 bsgn ** 1pin japan tc55 cm416 btgn ** 1pin
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 14/18 package dimensions tsop 48-p-1220-0.50 unit:mm 18.4 0.1 12.0 0.1 1.0 0.1 0.1 0.05 0.5 0.1 0.145 0.055 20.0 0.2 0.5 0.25 typ m 0.08 0.22 0.08 12.4 max 1.2 max 25 24 1 48 0.1 0~10 weight:0.510 g (typ)
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 15/18 package dimensions tsop 48-p-1214-0.50 unit:mm 12.4 0.1 12.0 0.1 1.0 0.1 0.1 0.05 0.5 0.1 0.145 0.055 14.0 0.2 0.5 0.25 typ m 0.08 0.22 0.08 12.4 max 1.2 max 25 24 1 48 0.1 0~10 weight:0.353 g (typ)
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 16/18 package dimensions unit:mm 0.75 0.75 2.875 2.125 0.375 a (3.75) (5.25) 0.375 sab 0.08 0.43 0.05 2 3 4 5 6 abcdefgh b 1 p-tfbga48-0811-0.75bz 0.1 s s 0.1 s 0.28 0.05 max 1.2 8.0 11.0 s a 0.15 4 sb 0.2 0.2 weight:0.154 g (typ)
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 17/18 revision history revision page draft date after before type passage content
tc55vcm416btgn, tc55v cm416bsgn, TC55VEM416BXGN55 tc55ycm416btgn, tc55ycm 416bsgn, tc55yem416bxgn70 2005-08-09 18/18 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inhe rent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within s pecified operating ranges as set forth in the most recent toshiba products specific ations. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semicon ductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are inte nded for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunc tion or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control in struments, airplane or spaceship instruments, transportation instruments, traffic signa l instruments, combusti on control instruments, medical instruments, all types of safety devices, etc .. unintended usage of toshiba products listed in this document shall be made at th e customer?s own risk. ? the products described in this document are subject to the foreign exchange and foreign trade laws. ? toshiba products should not be embedded to the down stream products which ar e prohibited to be produced and sold, under any law and regulations. 030619eb a restrictions on product use

▲Up To Search▲

Price & Availability of TC55VEM416BXGN55

	To Download TC55VEM416BXGN55 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .